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product summary v dss i d r ds(on) ( ) typ 650v 7a 1.2 @ vgs=10v www.samhop.com.tw nov,25,2014 1 details are subject to change without notice. symbol v ds v gs i dm w a p d c -55 to 175 i d units parameter 650 7 21 v v 30 t c =25 c gate-source voltage drain-source voltage absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed ac maximum power dissipation operating junction and storage temperature range t j , t stg t c =25 c a t c =100 c a 5 t c =100 c w e as mj single pulse avalanche energy d 480 n-channel logic level enhancement mode field effect transistor features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. 94 47 thermal characteristics 50 c/w thermal resistance, junction-to-ambient r ja 1.6 c/w thermal resistance, junction-to-case r jc s mhop microelectronics c orp. a sdu/d07n65 green product ver 1.0 g g s s sdd series to-251s(i-pak) g g s s d d g g s s d d sdd series to-251l(i-pak) sdu series to-252(d-pak) d ordering information ordering code package marking code delivery mode rohs status sdd07n65hs to-251s to-251l sdd07n65 sdd07n65 tube tube halogen free sdu07n65hz to-252 sdu07n65 reel halogen free sdd07n65hl halogen free c
www.samhop.com.tw nov,25,2014 2 ver 1.0 4 symbol min typ max units bv dss 650 v 1 i gss 100 na v gs(th) 2 v g fs 9.7 s v sd c iss 937 pf c oss 93 pf c rss 13 pf q g 30 nc 17 nc q gs 49 nc q gd 16 t d(on) ns t r 2.5 ns t d(off) 6 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =325v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time v ds =325v,i d =1a,v gs =10v fall time turn-on delay time ohm v gs =10v,i d =3.5a v ds =10v , i d =3.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =520v , v gs =0v v gs =30v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 4 1.5 b f=1.0mhz b v ds =325v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =3a 1.4 v 15 1.2 0.79 3 notes sdu/d07n65 a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting t j =25 c,l=60mh,v dd = 50v.(see figure13) e.mounted on fr4 board of 1 inch 2 ,2oz. _ _
tj( c) ver 1.0 www.samhop.com.tw nov,25,2014 3 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 3.0 2.4 1.8 1.2 0.6 0 0 3.0 2.5 2.0 1.5 1.0 0.5 0.1 3.0 2.6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) 10 8 6 4 2 0 0 5 10 15 20 25 30 r ds(on) ( ) i d , drain current(a) figure 3. on-resistance vs. drain current and gate voltage r ds(on) , on-resistance normalized tj, junction temperature( c) figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage tj, junction temperature( c) bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature 246 810 0.0 16 5 4 3 2 v gs =4v v gs =5v v gs = 10v 25 c -55 c tj = 125 c v gs =10v v gs = 10v i d = 3.5a v ds =v gs i d =250ua i d =250ua sdu/d07n65
ver 1.0 www.samhop.com.tw nov,25,2014 4 10 0 r ds(on) ( ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage 3.6 3.0 2.4 1.8 1.2 0.6 0 125 c is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current 20.0 10.0 1.0 5.0 0 0.3 0.6 0.9 1.2 1.5 c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance 010 20 30 40 50 1800 1500 1200 900 600 300 0 10 8 6 4 2 0 v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge i d = 3.5a 75 c 25 c 125 c 75 c 25 c ciss crss coss v ds = 325v i d =1a 0 5 10 15 20 sdu/d07n65 figure 12. maximum safe i d , drain current (a) v ds , drain-source voltage (v) operating area 0.1 1 10 100 1000 switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 1 1 0.01 0.1 1 10 1000 10 10 100 dc 10ms 1m s 100us v gs =10v single pulse t a =25 c v ds =350v, i d =1a v gs =10v td(on) tr tf td(off) 100 24 68 r ds (on )limit
www.samhop.com.tw 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. 2. 3. 4. single pulse t p i as figure 13a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 13b. v (br)dss 1 r ja r ja(t)=r(t)* r ja=see datasheet t jm -t a =p dm * r ja(t) duty cycle,d= t 1 / t 2 ver 1.0 nov,25,2014 sdu/d07n65
sdu/d07n65 ver 1.0 www.samhop.com.tw nov,25,2014 6 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380
www.samhop.com.tw 7 package outline dimensions to-251s b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d 6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 1.0 nov,25,2014 sdu/d07n65
ver 1.0 www.samhop.com.tw nov,25,2014 8 package outline dimensions sdu/d07n65 to-251l a1 d a e l1 b1 b2 e c e1 c1 symbol millimeters min nom a 6.40 6.50 a1 5.30 5.40 a2 4.30 b 1.35 1.50 l1 l d 5.40 5.55 c 0.55 0.60 c1 e1 1.72 e 2.20 2.30 0.60 0.75 b1 b 4.40 1.77 l b2 1.55 ref 7.40 7.70 0.70 0.85 a2 b4 b3 b3 b4 e max 6.60 5.50 4.50 1.65 8.00 5.70 0.65 0.49 0.54 0.59 1.82 2.40 0.80 0.90 2.30
ver 1.0 www.samhop.com.tw nov,25,2014 9 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @* a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h sdu/d07n65
www.samhop.com.tw 10 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) sdu07n65 smc internal code no. (a,b,c...z) ver 1.0 sdu/d07n65 nov,25,2014
www.samhop.com.tw 11 top marking definition to-251s ver 1.0 sdu/d07n65 nov,25,2014 to-251l xxxxxx product no. samhop logo sdd07n65 wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. (a,b,c...z) xxxxxx sdd07n65 production year (2009 = 9, 2010 = a.....) production month (1,2 ~ 9, a,b,c) production date (1,2 ~ 9, a,b.....) wafer lot no. smc internal code no. (a,b,c...z)

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